RIR Power Electronics Limited completed the installation of Silicon Carbide (SiC) Epitaxial Wafer Manufacturing Reactors at its Bhubaneswar facility on September 16, 2026.

The development marks a critical step toward establishing India's first vertically integrated SiC semiconductor production facility. The company aims to commence commercial production after fulfilling remaining statutory and regulatory formalities.

Facility Milestones

The installation includes key equipment for the SiC epitaxial wafer manufacturing process. Essential power connections, utilities, and supporting infrastructure have been commissioned and are in place. Shri Vishal Dev, Additional Chief Secretary of the Government of Odisha, witnessed the facility's readiness alongside senior officials.

This infrastructure completion supports RIR Power Electronics' planned ₹618 crore investment in a vertically integrated SiC semiconductor manufacturing ecosystem. The facility is designed to produce advanced SiC-based power semiconductor devices, including high-power MOSFETs, diodes, and modules.

Strategic Context

SiC technology offers higher energy efficiency, improved power handling, and reduced power losses compared to conventional silicon-based technologies. These attributes make SiC critical for applications in electric mobility, renewable energy, energy storage, railways, aerospace, defence, data centres, and industrial automation.

The project aligns with the "Make in India" and "Atmanirbhar Bharat" initiatives. It supports Odisha's emergence as a hub in India's semiconductor value chain by enabling advanced manufacturing capabilities for domestic and global markets.

What the Numbers Show

The ₹618 crore capital expenditure represents a significant commitment to upstream semiconductor manufacturing. By focusing on the epitaxial wafer stage—the foundational step in the value chain—the company is building a "Silicon Carbide to System" approach. This vertical integration strategy aims to capture value across the entire production spectrum, from raw wafers to final system-level solutions, rather than relying solely on downstream assembly or packaging.

RIR Power Electronics has fixed September 22, 2026 as the record date for determining shareholder eligibility for its final dividend. The payout is proposed at ₹0.10 per equity share with a face value of ₹2 each for FY26.

Dividend and AGM Schedule

The company confirmed the details in a filing with stock exchanges on September 5, 2026. If shareholders approve the dividend at the upcoming meeting, the payment will be made within 30 days of approval.

The 57th Annual General Meeting (AGM) is scheduled for Tuesday, September 29, 2026. Key dates for the process are:

• Record date: September 22, 2026
• E-voting start: September 26, 2026, 9:00 am
• E-voting end: September 28, 2026, 5:00 pm

Shareholders holding equity shares on the record date will be eligible to vote during the e-voting window.

Annual Report and Shareholder Communication

In a separate disclosure dated September 8, 2026, RIR Power Electronics informed exchanges that it has dispatched physical letters to shareholders who have not registered email addresses with the company or depositories. These letters provide web links to access the Annual Report for FY25-26.

The notice states that the Annual Report and AGM notice are available electronically for registered shareholders. The physical dispatch complies with Regulation 36(1)(b) of the SEBI (Listing Obligations and Disclosure Requirements) Regulations, 2015.

Regulatory Compliance

The intimation was issued pursuant to Regulation 42 of the SEBI (Listing Obligations and Disclosure Requirements) Regulations, 2015. Bhavin P Rambhia, Company Secretary, signed the disclosure.