RIR Power Electronics Ltd., in collaboration with Silicon University, Odisha, has secured two research paper selections for presentation at the IEEE Midwest Symposium on Circuits and Systems (MWSCAS) 2026. The conference is scheduled to be held in Cincinnati, Ohio, USA. The research highlights advancements in Silicon Carbide (SiC) semiconductor technology, targeting improvements in efficiency and reliability for next-generation electric mobility and industrial applications.

The accepted papers address critical challenges in high-voltage power electronics, specifically thermal management, switching efficiency, and compact system design. The first paper presents a comparative analysis of SiC MOSFET and conventional Silicon IGBT Traction Inverter Topologies. Utilizing a 33 kW Permanent Magnet Synchronous Motor (PMSM) drive model, the study demonstrates the superior electrical and thermal performance of 3.3 kV SiC MOSFET technology.

The second paper investigates 4H-SiC Implant Epitaxy MOSFET designs for high-voltage applications starting from 3.3 kV. The research employs Silvaco Technology Computer-Aided Design (TCAD) tools to evaluate the trade-off between manufacturing simplicity and device performance. This work aims to enable the development of more efficient and compact high-voltage SiC power devices.

Strategic Collaboration

The achievement stems from a strategic industry-academia partnership established under a Memorandum of Understanding signed in November 2025. The collaboration focuses on advancing next-generation SiC semiconductor devices and high-voltage power electronics technologies. These technologies are critical for sectors such as electric mobility, renewable energy, industrial automation, and modern power infrastructure.

Management Commentary

Dr. Jaideep Talukdar, Vice Chancellor, Silicon University, emphasized the strength of the collaboration in accelerating innovation in wide-bandgap power semiconductors. Dr. Harshad Mehta, Non-Executive Chairman, RIR Power Electronics Ltd., noted that the selection reflects the shared vision of advancing silicon carbide technologies. He added that such collaborations are instrumental in building indigenous capabilities as India accelerates its semiconductor ambitions.

RIR Power Electronics Limited is set to participate in the Dolat Capital Semiconductor Conference 2026 on June 12, 2026. The company will engage with analysts and investors through physical, in-person meetings at Hotel Grand Hyatt in Mumbai. This interaction provides a platform for the company to discuss its performance and outlook based on publicly available information.

The participation is pursuant to Regulation 30 of the SEBI (Listing Obligations and Disclosure Requirements) Regulations, 2015. The company clarified that no unpublished price sensitive information (UPSI) is intended to be shared or discussed during the interaction. The schedule is subject to change due to exigencies on the part of the analysts, investors, or the company, with any revisions to be communicated to the stock exchange.

Conference Details

The following table outlines the specifics of the participation:

Bhavin P Rambhia, Company Secretary of RIR Power Electronics Limited, signed the disclosure on June 9, 2026. The information is also available on the company's official website.