RIR Power Electronics will list its equity shares on the National Stock Exchange of India Limited (NSE) with effect from Thursday, July 16, 2026. This move enhances stock liquidity, improves price discovery, and broadens access to a diversified base of institutional and retail investors. The company, already listed on BSE Limited since 1986, received the necessary approval from the exchange for the listing and trading of its securities.

The NSE confirmed that 79,572,400 equity shares of Rs. 2/- each fully paid up will be admitted to dealings under the symbol RIR. The market lot for these securities is set at 1, with distinctive numbers ranging from 1 to 79,572,400. There are no lock-in restrictions applicable to these shares. The approval was communicated via NSE letter no. NSE/LIST/250 dated July 14, 2026.

Listing Details

The following table outlines the key specifications of the securities admitted to trading on the NSE:

Management Commentary

Dr. Harshad Mehta, Non-Executive Chairman of RIR Power Electronics Ltd., stated that the listing represents an important chapter in the company's growth journey. He added that it reflects shareholder trust and acknowledges the dedication of employees and stakeholders. Mr. N. Ramesh Kumar, Managing Director & CEO, noted that the NSE listing is a pivotal step in strengthening the company's growth trajectory and attracting diverse investors.

Company Overview

RIR Power Electronics Limited, founded in 1969, is a manufacturer of high-power semiconductor devices and power electronics solutions. The company has a current market cap of approximately Rs. 1,257 crores as on July 14, 2026. It produces semiconductor devices used across critical infrastructure sectors including railways, defense, Electric Vehicles (EVs), and power generation. The company currently operates a manufacturing plant in Halol, Gujarat, and is setting up a new facility in Bhubaneshwar, Odisha.

RIR Power Electronics Ltd., in collaboration with Silicon University, Odisha, has secured two research paper selections for presentation at the IEEE Midwest Symposium on Circuits and Systems (MWSCAS) 2026. The conference is scheduled to be held in Cincinnati, Ohio, USA. The research highlights advancements in Silicon Carbide (SiC) semiconductor technology, targeting improvements in efficiency and reliability for next-generation electric mobility and industrial applications.

The accepted papers address critical challenges in high-voltage power electronics, specifically thermal management, switching efficiency, and compact system design. The first paper presents a comparative analysis of SiC MOSFET and conventional Silicon IGBT Traction Inverter Topologies. Utilizing a 33 kW Permanent Magnet Synchronous Motor (PMSM) drive model, the study demonstrates the superior electrical and thermal performance of 3.3 kV SiC MOSFET technology.

The second paper investigates 4H-SiC Implant Epitaxy MOSFET designs for high-voltage applications starting from 3.3 kV. The research employs Silvaco Technology Computer-Aided Design (TCAD) tools to evaluate the trade-off between manufacturing simplicity and device performance. This work aims to enable the development of more efficient and compact high-voltage SiC power devices.

Strategic Collaboration

The achievement stems from a strategic industry-academia partnership established under a Memorandum of Understanding signed in November 2025. The collaboration focuses on advancing next-generation SiC semiconductor devices and high-voltage power electronics technologies. These technologies are critical for sectors such as electric mobility, renewable energy, industrial automation, and modern power infrastructure.

Management Commentary

Dr. Jaideep Talukdar, Vice Chancellor, Silicon University, emphasized the strength of the collaboration in accelerating innovation in wide-bandgap power semiconductors. Dr. Harshad Mehta, Non-Executive Chairman, RIR Power Electronics Ltd., noted that the selection reflects the shared vision of advancing silicon carbide technologies. He added that such collaborations are instrumental in building indigenous capabilities as India accelerates its semiconductor ambitions.