RIR Power Electronics has secured approval from the National Stock Exchange of India Limited (NSE) to list its equity shares on the exchange's mainboard platform. The listing will become effective from Thursday, July 16, 2026, allowing trading of the company's securities under the symbol RIR. This development expands the company's access to the capital markets and provides liquidity to its shareholders.

The approval was communicated via NSE letter no. NSE/LIST/250 dated July 14, 2026. The exchange confirmed that 79,572,400 equity shares of Rs. 2/- each fully paid up will be listed and admitted to dealings. The market lot for these securities is set at 1, with distinctive numbers ranging from 1 to 79,572,400. There are no lock-in restrictions applicable to these shares.

Listing Details

The following table outlines the key specifications of the securities admitted to trading on the NSE:

Compliance and Future Filings

RIR Power Electronics is required to submit all reports, statements, and documents mandated by SEBI (LODR), 2015 regulations through the NSE Electronic Application Processing System (NEAPS). The company must also seek separate exchange approvals for any future corporate actions, grants, or allotments. The NSE has also introduced a NEAPS mobile application to facilitate tracking of submissions and compliance calendars for listed entities.

RIR Power Electronics Ltd., in collaboration with Silicon University, Odisha, has secured two research paper selections for presentation at the IEEE Midwest Symposium on Circuits and Systems (MWSCAS) 2026. The conference is scheduled to be held in Cincinnati, Ohio, USA. The research highlights advancements in Silicon Carbide (SiC) semiconductor technology, targeting improvements in efficiency and reliability for next-generation electric mobility and industrial applications.

The accepted papers address critical challenges in high-voltage power electronics, specifically thermal management, switching efficiency, and compact system design. The first paper presents a comparative analysis of SiC MOSFET and conventional Silicon IGBT Traction Inverter Topologies. Utilizing a 33 kW Permanent Magnet Synchronous Motor (PMSM) drive model, the study demonstrates the superior electrical and thermal performance of 3.3 kV SiC MOSFET technology.

The second paper investigates 4H-SiC Implant Epitaxy MOSFET designs for high-voltage applications starting from 3.3 kV. The research employs Silvaco Technology Computer-Aided Design (TCAD) tools to evaluate the trade-off between manufacturing simplicity and device performance. This work aims to enable the development of more efficient and compact high-voltage SiC power devices.

Strategic Collaboration

The achievement stems from a strategic industry-academia partnership established under a Memorandum of Understanding signed in November 2025. The collaboration focuses on advancing next-generation SiC semiconductor devices and high-voltage power electronics technologies. These technologies are critical for sectors such as electric mobility, renewable energy, industrial automation, and modern power infrastructure.

Management Commentary

Dr. Jaideep Talukdar, Vice Chancellor, Silicon University, emphasized the strength of the collaboration in accelerating innovation in wide-bandgap power semiconductors. Dr. Harshad Mehta, Non-Executive Chairman, RIR Power Electronics Ltd., noted that the selection reflects the shared vision of advancing silicon carbide technologies. He added that such collaborations are instrumental in building indigenous capabilities as India accelerates its semiconductor ambitions.