SK hynix ships 12-layer HBM4E samples with 16Gbps speed
SK hynix Inc. has begun shipping samples of its 12-layer HBM4E memory to major customers, featuring 16Gbps speed and over 20% improved power efficiency. The product utilizes Advanced Mass Reflow Molded Underfill technology to achieve 48GB capacity and 17% better heat resistance. President Ahn Hyun stated the company aims to reinforce its position as an AI memory creator through collaboration.
*this image is generated using AI for illustrative purposes only.
SK hynix Inc. announced on June 17, 2026, that it has shipped samples of its 12-layer HBM4E, a next-generation DRAM designed for artificial intelligence applications, to major customers. The new memory product achieves a maximum data processing speed of 16Gbps per pin and offers power efficiency improvements of more than 20% compared to previous models. These advancements are intended to enhance data processing capabilities for AI training and inference tasks.
The company utilized its Advanced Mass Reflow Molded Underfill (MR-MUF) technology to achieve a 48GB capacity within the 12-layer stack while ensuring structural stability. This manufacturing process involves injecting liquid protective materials between chips to protect circuits. Additionally, the HBM4E improves heat resistance by 17% compared to the preceding HBM4, enabling stable operation in high-performance computing environments.
Key Specifications and Improvements
The HBM4E reduces data transfer latency through its latest interface and design optimization. This allows customers to increase efficiency when processing data for AI data centers and large-scale computing systems. The following table summarizes the key specifications of the new product:
| Metric | Value |
|---|---|
| Layers | 12 |
| Capacity | 48GB |
| Speed | 16Gbps per pin |
| Power Efficiency Gain | >20% |
| Heat Resistance Improvement | 17% |
SK hynix has successfully supplied optimized memory solutions based on its expertise in the mass production of HBM3, HBM3E, and HBM4. The company aims to support the development of next-generation infrastructure and address AI system bottlenecks through these new offerings.
Strategic Leadership and Future Plans
"SK hynix has laid the foundation to strengthen its AI leadership with HBM4E based on its market-leading technological capabilities and manufacturing expertise," said Ahn Hyun, President and Chief Development Officer. He added that the company will deliver value needed in the market while reinforcing its position as a full-stack AI memory creator through close collaboration with partners. The company confirmed that it delivered the samples on schedule and plans to work closely with partners for timely mass production.
What is the projected timeline for mass production and commercial availability of the 12-layer HBM4E?
How will the 20% improvement in power efficiency impact the total cost of ownership for AI data center operators?
Which major customers have received the initial samples, and what are their specific integration plans?
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