Newsonsemi Introduces GaNEXUS Gallium Nitride Power Portfolio for AI Data Centers and Industrial Applicationsonsemi Introduces GaNEXUS Gallium Nitride Power Portfolio for AI Data Centers and Industrial Applications
onsemi has launched GaNEXUS™, a gallium nitride power portfolio with FETs sampling across 40V to 650V, including 650V GaNEXUS Smart GaN FETs with integrated protection. The portfolio targets AI data centers, industrial automation, robotics, and energy infrastructure, offering up to ~60% reduction in magnetics size and ~1.5x–2x higher power density in higher-voltage applications. GaNEXUS complements onsemi's existing silicon and EliteSiC technologies and integrates with the company's Treo Platform for system-level power management.
*this image is generated using AI for illustrative purposes only.
onsemi has announced the launch of GaNEXUS™, a new gallium nitride (GaN) power portfolio engineered to deliver higher efficiency, greater power density, and improved thermal performance. The initial portfolio includes GaNEXUS FETs sampling across voltage ranges from 40V to 650V, including 650V GaNEXUS Smart GaN FETs with integrated protection features, targeting applications in AI data centers, industrial automation, robotics, and energy infrastructure.
Portfolio Overview and Strategic Context
The GaNEXUS portfolio expands onsemi's intelligent power offerings alongside its existing silicon and EliteSiC technologies, giving customers greater flexibility to optimize performance, efficiency, thermal behavior, and total system cost across the full power-delivery architecture. The addition of GaNEXUS is positioned to address growing design challenges around energy consumption, thermal management, and system size as AI infrastructure, electrification, and industrial automation continue to drive demand for more compact and efficient power architectures.
AI data centers alone are expected to consume up to 9% of U.S. electricity generation by 2030, with power and cooling costs accounting for up to 40% of total data center operating expenses.
Key Portfolio Highlights
- GaNEXUS FETs sampling across voltage ranges from 40V to 650V
- 650V GaNEXUS Smart GaN FETs with integrated protection features to simplify system integration and improve reliability
- Faster switching speeds, lower switching losses, higher power density, and improved thermal performance compared to conventional silicon-based solutions
- Compatible with onsemi's Treo Platform for integrated sensing, control, protection, and power management
- Thermally enhanced packages with industry-standard footprints including TOLL Bottom Cooling, TOLT Top Cooling, and dual cooling 3.3mm x 3.3mm and 5mm x 6mm packages
Performance Benefits by Application Segment
GaNEXUS delivers distinct performance advantages across both low- to medium-voltage and higher-voltage application segments. The following tables summarize the key performance benefits:
Low- and Medium-Voltage Systems (including AI server 48V intermediate bus converter, battery backup units, and motor drives):
| Metric: | Performance Benefit |
|---|---|
| Magnetics Size Reduction: | ~30–60% smaller magnetics |
| Power Density Improvement: | ~1.5x–2x higher power density |
| Efficiency Improvement: | ~0.5–2% depending on topology |
| Additional Benefits: | Reduced switching losses, improved thermal performance and control stability |
Higher-Voltage Applications (including AI power shelves, high-voltage DC-DC conversion, PFC, and LLC power stages):
| Metric: | Performance Benefit |
|---|---|
| Magnetics Size Reduction: | Up to ~60% in high-frequency AC-DC and resonant stages |
| Power Density Improvement: | ~1.5x–2x in PFC, LLC, and HV DC-DC architectures |
| Efficiency Gains: | ~0.5–1% with meaningful thermal and operating-cost impact at scale |
| Thermal Management: | Lower losses reduce thermal stress in compact, high-power systems |
| System Design: | GaNEXUS Smart simplifies power stage design for faster qualification |
System-Level Integration with Treo Platform
When paired with onsemi's Treo Platform for integrated sensing, control, protection, and power management, GaNEXUS is designed to deliver complete system-level power solutions. This system-level approach is intended to help customers simplify design complexity, accelerate development and qualification, reduce thermal and cooling requirements, and optimize performance across the full power delivery chain.
"Our GaNEXUS portfolio is enabling new architectures for power system design," said Antoine Jalabert, vice president of the GaN division at onsemi. "As customers push for more power in less space, it gives engineers greater flexibility to overcome constraints that have limited conventional power architectures."
About onsemi
onsemi delivers intelligent power and sensing technologies that enable electrification, energy efficiency, safety, and automation across automotive, industrial, and AI data center end-markets. The company is a component of the S&P 500® index.
What is the anticipated timeline for mass production of the GaNEXUS portfolio following the current sampling phase?
How will onsemi differentiate GaNEXUS from competing GaN solutions in the crowded AI data center power market?
What impact will the adoption of GaNEXUS have on onsemi's revenue mix relative to its existing silicon and EliteSiC technologies?
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