Magnachip Semiconductor Corporation appointed Chae Lee as Chief Executive Officer, effective July 1, 2026. Lee succeeds Camillo Martino, who has served as Interim Chief Executive Officer since August 2025 and will continue to serve as Chairman of the Board of Directors. Lee is also expected to join Magnachip’s Board of Directors following the effective date of his appointment.

Lee brings more than 30 years of global semiconductor industry experience spanning power semiconductors, power management integrated circuits (PMIC), sensors, and audio amplifiers. His expertise covers applications, sales, marketing, operations, and executive leadership. Most recently, he served as Chief Executive Officer of Tagore Technology, a provider of Gallium Nitride (GaN) semiconductor solutions for Radio Frequency (RF) and Power applications. Prior to Tagore, Lee held senior leadership positions at semiconductor companies including Insyte Systems, NXP Semiconductors, and Maxim Integrated Products where he was responsible for strong high-margin revenue growth through innovative product development in its mobility group.

Camillo Martino, Chairman of the Board, stated that Lee’s background is suited to guide Magnachip through its next phase of growth. Martino highlighted Lee’s combination of technical expertise, operational leadership, and commercial experience across power ICs and system solutions. He noted that this aligns with Magnachip’s strategy to strengthen its product portfolio, accelerate innovation, and expand its presence in high-value power semiconductor markets.

Lee expressed confidence in Magnachip’s position to capitalize on long-term opportunities across AI, data center, industrial, automotive, robotics, communications, computing, and consumer applications. He cited the company’s heritage in power semiconductors, talented team, and valuable manufacturing assets. Lee aims to build on the progress already underway to create value for customers, employees, and shareholders.

Key Appointments

Magnachip Semiconductor Corporation announced the introduction of two new 6th-generation 600V Super Junction (SJ) MOSFETs designed to meet the performance and efficiency requirements of AI servers, EV charging systems, and industrial power applications. The new products feature low RDS(ON) values of 36mΩ and 37mΩ, helping reduce conduction losses and improve overall power conversion efficiency. Both devices integrate a Zener diode between the gate and source terminals to provide enhanced protection against electrostatic discharge (ESD), thereby improving device reliability.

Technical Specifications and Features

The chip size has been significantly reduced compared with the previous generation, contributing to improved integration and design flexibility. Both devices are offered in a TOLL package and are designed for high-power, high-current applications. They also feature a Kelvin Source configuration, which reduces parasitic inductance and improves switching stability.

The MMTB60R037G6FZVRH incorporates a Fast Recovery Body Diode, which helps reduce reverse recovery losses and improve switching performance in high-frequency power conversion systems. These characteristics make it well suited for AI server power supplies, where efficiency, thermal management, and power density are critical design considerations.

Market Outlook and Applications

According to Omdia, the discrete semiconductor market within computing & data storage applications is projected to grow from approximately $3.7 billion in 2025 to approximately $5.9 billion by 2030, representing a compound annual growth rate (CAGR) of approximately 9%. The growing adoption of high-density, high-efficiency server power architectures is expected to further drive demand for power discrete devices, including SJ MOSFETs.

"As demand continues to grow for more efficient and reliable power systems across AI infrastructure, EV charging systems and industrial applications, power semiconductor performance becomes increasingly important," said Hyuk Woo, Chief Technology Officer of Magnachip. "Our new 6th-generation 600V SJ MOSFETs combine low on-resistance, enhanced switching characteristics and robust reliability features to help customers improve efficiency and power density in next-generation power designs."

The new SJ MOSFETs are suitable for a wide range of power applications requiring high efficiency and reliability, including AI server power supplies, industrial power supplies, telecom infrastructure, and EV charging systems.